An Advanced Load-Line Analysis Software for use in the Design and Simulation of Microwave Low-Distortion, High-Efficiency and High-Power GaN HEMT Amplifiers
by Yasushi Itoh* 
, Takana Kaho, Koji Matsunaga
Faculty of Engineering, Shonan Institute of Technology, Fujisawa 251-8511, Japan
* Author to whom correspondence should be addressed.
Journal of Engineering Research and Sciences, Volume 2, Issue 4, Page # 14-21, 2023; DOI: 10.55708/js0204002
Keywords: Load-Line Analysis, Low-Distortion, High-Efficiency, Power Amplifier, Microwave, GaN HEMT
Received: 21 March 2023, Accepted: 06 April 2023, Published Online: 28 April 2023
APA Style
Chicago/Turabian Style
IEEE Style
An advanced load-line analysis software is devised for nonlinear circuit design and simulation of microwave low-distortion, high-efficiency and high-power GaN HEMT amplifiers. A single software package can incorporate DC, small- and large-signal performances of GaN HEMT devices, and then analyze nonlinear performance of amplitude-to-amplitude (AM-AM) and amplitude-to-phase (AM-PM) modulations, and finally evaluate intermodulation distortion (IMD) and error vector measurement (EVM). High speed and high accurate simulation become available with the use of behavioral modeling for representing nonlinear performance of GaN HEMT devices. In addition, the software employs a time-domain analysis using time-varying electrical waveform and thus give clear and deep insight into the nonlinear behavior of GaN HEMT devices as well as the nonlinear circuit design technique of low-distortion and high-efficiency amplifiers. In comparison with the harmonic-balance (HB) method, comparable performances have been successfully achieved for an L-band 10W GaN HEMT amplifier.
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